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TSC2010IYDT is listed in the Instrumentation, Op Amps, Buffer Amps range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is IC CURRENT SENSE 1 CIRCUIT 8SOIC. Review the specifications below when checking this part for your BOM.
The TSC2010IYDT is a high-voltage, precision bidirectional current sense amplifier from STMicroelectronics. It features a fixed gain of 20 V/V and operates with a supply voltage range of 2.7 to 5.5 V. The device supports a wide common mode voltage range from -20 to +70 V, enabling both high-side and low-side sensing. Key electrical specifications include a maximum offset voltage of ±200 µV, a maximum gain error of 0.3%, and an offset drift of 5 µV/°C. It functions within an industrial temperature range of -40 to 125 °C and includes a shutdown mode with a quiescent current of 20 µA.
Verify the specific suffix 'IYDT' against official documentation to confirm package type (MiniSO8) and temperature grade. Ensure compatibility with system requirements for the 20 V/V gain configuration. Cross-reference part numbers with the manufacturer's latest datasheet revisions to confirm availability and pinout consistency before finalizing procurement.
Select this component when a fixed 20 V/V gain is required for bidirectional current monitoring. It is suitable for applications requiring operation across a broad common mode voltage range without external protection components. Consider the MiniSO8 package constraints and the specific shutdown current characteristics for power-sensitive designs.
This device belongs to the TSC201x family of high-voltage current sense amplifiers, which also includes the TSC2011 (60 V/V gain) and TSC2012 (100 V/V gain). All members share similar architectural features, including wide common mode voltage tolerance and precision offset characteristics, but differ primarily in their internal amplifier gain settings.
TSC2011: Offers 60 V/V gain instead of 20 V/V. TSC2012: Offers 100 V/V gain instead of 20 V/V. Both share the same package options and general electrical characteristics.
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