TSCDF16065G1

Single Diodes Overview

The TSCDF16065G1 is a single silicon carbide Schottky diode manufactured by Taiwan Semiconductor. It features a TO-220AC-2 through-hole package and supports a maximum repetitive reverse voltage of 650 V with an on-state forward voltage of 1.38 V at 16 A. The device handles a continuous forward current of 16 A and a non-repetitive surge current of 100 A, while maintaining a low reverse leakage current of 20 uA. It operates reliably within a temperature range from -55 C to +175 C and holds AEC-Q101 qualification for automotive applications.

Single Diodes Feature Summary

• Utilizes wide bandgap silicon carbide technology to achieve negligible switching losses due to low capacitance charge.
• Features a positive temperature coefficient for the forward voltage, ensuring stable parallel operation and reliable thermal performance.
• Provides high-speed switching capabilities suitable for high-frequency power conversion circuits.

Single Diodes Applications

• Power Factor Correction boost diodes
• Free-wheeling diodes in DC/DC converters
• Full-wave bridge rectifiers
• Vienna rectifier topologies

Single Diodes Procurement Notes

Verify the specific ordering suffix to confirm the exact packaging configuration, as variations may exist between tube and reel formats. Confirm that the required AEC-Q101 automotive qualification aligns with your design specifications. Ensure the TO-220AC-2 lead form matches your PCB footprint requirements before finalizing procurement orders.

Single Diodes Selection Notes

Select this component when designing systems requiring high efficiency at elevated temperatures up to 175 C. The low forward voltage drop reduces conduction losses compared to standard silicon alternatives. Consider the thermal resistance of the TO-220AC-2 package for adequate heat dissipation in high-current applications without excessive heatsinking.

Single Diodes Part Context

This part belongs to Taiwan Semiconductor's 650 V Silicon Carbide Schottky barrier diode series. These devices are engineered to replace silicon fast recovery rectifiers, offering superior performance in terms of switching speed and thermal stability. The series targets modern power electronics demanding higher power density and reduced system size.

Single Diodes Replacement Considerations

Direct replacements must match the 650 V rating, 16 A current capacity, and TO-220AC-2 package. Verify that substitute components also offer comparable forward voltage characteristics and reverse leakage limits to maintain circuit efficiency and reliability standards.