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TSM2N7002AKCX RFG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is 60V, 0.3A, SINGLE N-CHANNEL POWE. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for TSM2N7002AKCX RFG
- Description：60V, 0.3A, SINGLE N-CHANNEL POWE
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.5Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.65 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：20 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：357mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for TSM2N7002AKCX RFG
Single FETs, MOSFETs Overview
The TSM2N7002AKCX RFG is an N-Channel Power MOSFET manufactured by Taiwan Semiconductor. It features a Drain-Source Voltage (VDS) of 60 V and a continuous Drain Current (ID) of 300 mA at 25°C. The device exhibits a maximum Drain-Source On-State Resistance (RDS(on)) of 2.5 Ω at VGS = 10V and 4 Ω at VGS = 4.5V. Total Gate Charge (Qg) is 1.65 nC. It operates within a junction temperature range of -55 to +150 °C, with a total power dissipation of 357 mW at 25°C.
Single FETs, MOSFETs Feature Summary
- Logic level operation for direct interface with standard logic circuits
- Low gate charge enabling fast power switching performance
- ESD protection rated at 2KV under Human Body Model conditions
Single FETs, MOSFETs Applications
- Low Side Load Switching
- Level Shift Circuits
- General Switch Circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'RFG' against the manufacturer's ordering information to confirm the reel packing quantity of 3,000 pieces in a 7-inch format. Ensure that the component version A2111 matches the required revision for the design. Confirm RoHS compliance and halogen-free status according to IEC 61249-2-21 standards prior to final procurement authorization.
Single FETs, MOSFETs Selection Notes
Select this component when a 60V N-Channel MOSFET with low on-resistance is required for small signal applications. The 2.5Ω RDS(on) at 10V drive makes it suitable for logic-level control. Consider the SOT-23 package constraints and the 350 °C/W thermal resistance for heat dissipation requirements in the target circuit layout.
Single FETs, MOSFETs Part Context
This part belongs to the TSM2N7002AKCX series of N-Channel Power MOSFETs from Taiwan Semiconductor. It utilizes silicon technology and is housed in a surface-mount SOT-23 package. The device is designed to minimize conductive losses while providing robust switching capabilities for general-purpose electronic applications.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other 60V, 300mA N-Channel MOSFETs in SOT-23 packages. Verify pinout compatibility and ensure equivalent or superior electrical parameters for RDS(on), VGS(th), and Qg before substituting.
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