TSM900N10CP

Single FETs, MOSFETs Overview

The TSM900N10CP is a single N-channel power MOSFET manufactured by Taiwan Semiconductor Corporation. It utilizes silicon technology and is housed in a DPAK-3 (TO-252-3) surface-mount package. The device features a drain-source breakdown voltage of 100V and supports a continuous drain current of 15A. Its on-resistance is specified at 10 milliohms, with a gate-source voltage rating of ±20V. The component operates within a temperature range from -55°C to +150°C junction temperature and has a maximum power dissipation of 75W.

Single FETs, MOSFETs Feature Summary

• Single N-channel enhancement mode configuration for efficient switching applications
• Low on-resistance characteristic designed to minimize conduction losses
• Robust thermal performance supporting high junction temperatures up to 150°C

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Motor control systems
• Power management modules

Single FETs, MOSFETs Procurement Notes

Verify the exact part number against official Taiwan Semiconductor documentation to ensure correct specification matching. Confirm package type and electrical ratings align with design requirements before procurement. Check for any specific ordering suffixes that may indicate packaging variations or special configurations. Ensure compliance with relevant environmental standards such as RoHS if required by the application.

Single FETs, MOSFETs Selection Notes

Select this component based on its 100V voltage rating and 15A current capacity suitable for low-voltage power switching. Consider the DPAK-3 package for surface-mount assembly needs. Evaluate the 10mΩ on-resistance for efficiency requirements in power conversion designs. Verify thermal management capabilities given the 75W power dissipation limit and 150°C maximum junction temperature.

Single FETs, MOSFETs Part Context

This component belongs to the power MOSFET category within Taiwan Semiconductor's discrete semiconductor portfolio. It is designed for general-purpose power switching applications requiring reliable performance in compact surface-mount formats. The device represents standard silicon technology optimized for cost-effective solutions in consumer and industrial electronics.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer substitution guides for verified equivalent parts. Cross-reference specifications including voltage, current, resistance, and package dimensions when evaluating alternatives.