Diode Arrays TST30H60C product image

TST30H60C

$0.69
  • Description:DIODE ARR SCHOTT 60V 15A TO220AB
  • Series:-

SKU:a182553b49f5 Category: Brand:

  
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TST30H60C is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE ARR SCHOTT 60V 15A TO220AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for TST30H60C

  • Description:DIODE ARR SCHOTT 60V 15A TO220AB
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):60 V
  • Current - Average Rectified (Io) (per Diode):15A
  • Voltage - Forward (Vf) (Max) @ If:700 mV @ 15 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:55 µA @ 60 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for TST30H60C

TST30H60C

Diode Arrays Overview

The TST30H60C is a dual common cathode trench Schottky rectifier manufactured by Taiwan Semiconductor. It features a TO-220AB package with a total forward current rating of 30 A (15 A per diode) and a repetitive peak reverse voltage of 60 V. The device supports a surge peak forward current of 250 A at 8.3 ms and operates within a junction temperature range of -55°C to +150°C. Electrical specifications include a typical forward voltage of 0.56 V at 15 A and 25°C, with a maximum reverse current of 55 µA at rated voltage and 25°C.

Diode Arrays Feature Summary

  • Utilizes patented trench Schottky technology for high efficiency and low power loss.
  • Provides excellent high-temperature stability suitable for demanding thermal environments.
  • Offers high forward surge capability to withstand transient load conditions.

Diode Arrays Applications

  • Switching mode power supplies
  • Adapters
  • Lighting applications
  • On-board DC/DC converters

Diode Arrays Procurement Notes

Verify the specific datasheet revision C2012 when sourcing components to ensure alignment with current electrical parameters and mechanical dimensions. Confirm RoHS compliance and halogen-free status according to IEC 61249-2-21 standards during procurement. Check for updated discontinuation notices or alternative part numbers from Taiwan Semiconductor prior to finalizing supply chain agreements.

Diode Arrays Selection Notes

Select this component for designs requiring dual common cathode configurations in compact TO-220AB packages. Consider the 150°C maximum junction temperature for high-thermal-stress applications. Evaluate the trade-off between the 0.56 V typical forward voltage drop and the 55 µA reverse leakage current based on specific efficiency requirements. Ensure adequate heatsinking to maintain performance within the specified thermal resistance limits.

Diode Arrays Part Context

This device belongs to the TST series of trench Schottky rectifiers from Taiwan Semiconductor. It is designed as an upgrade to standard Schottky technologies, offering improved thermal stability and lower forward voltage drops. The dual common cathode configuration allows for efficient rectification in bridge-less PFC and synchronous rectification topologies commonly found in modern power electronics.

Diode Arrays Replacement Considerations

Consult official cross-reference lists from Taiwan Semiconductor for verified substitutes. Verify that any replacement maintains the TO-220AB footprint and matches the 60 V / 30 A ratings. Ensure the alternative device meets the same RoHS and halogen-free compliance standards required for the application.

Diode Arrays FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150°C.

Does the device meet environmental compliance standards?

Yes, the TST30H60C is RoHS compliant and halogen-free according to IEC 61249-2-21.

What is the surge current capability?

The device supports a surge peak forward current of 250 A for a duration of 8.3 ms per half sine-wave superimposed on rated load.

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