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TT10M-13 is listed in the Bridge Rectifier range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is BRIDGE RECT 1PHASE 1KV 10A TTL. Review the specifications below when checking this part for your BOM.
The TT10M-13 is a 10A standard recovery bridge rectifier from Diodes Incorporated, rated for a maximum repetitive peak reverse voltage of 1000V. It utilizes glass passivated die construction and is housed in a TTL package with matte tin plated leads. The device supports an average rectified output current of 10A at +25°C and withstands peak forward surge currents up to 180A (8.3ms single half sine wave). Key electrical parameters include a maximum forward voltage of 1.05V at 5A and a maximum leakage current of 5µA at rated voltage. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix '-13' corresponds to the reel packaging quantity of 1500 units as documented. Confirm that the TTL package dimensions match the target PCB footprint requirements. Ensure compliance with RoHS and lead-free specifications if required by the end application standards.
Select the TT10M variant specifically when a 1000V blocking voltage is necessary, distinguishing it from the 600V (TT10J) and 800V (TT10K) options within the same series. Evaluate thermal resistance values based on whether heatsinking is employed, as junction-to-ambient resistance varies significantly between mounted and unmounted conditions.
This component belongs to the TT10J–TT10M family of 10A standard recovery bridge rectifiers manufactured by Diodes Incorporated. All variants share identical mechanical data, current ratings, and package styles, differing only in their maximum repetitive peak reverse voltage ratings.
Direct functional substitutes within the same voltage class include the TT10J-13 and TT10K-13, provided the system voltage does not exceed their respective 600V and 800V ratings. Cross-brand replacements must match the 10A current rating, 1000V reverse voltage, and TTL package outline.
The device can withstand a peak forward surge current of 180A for an 8.3ms single half sine wave at +25°C, or 144A at +125°C.
Without a heatsink, the typical junction-to-ambient thermal resistance is 72°C/W. With a heatsink, this value drops significantly to 10°C/W.
Yes, the operating and storage temperature range extends from -55°C to +150°C.
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