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TT570N18KOFXPSA1 is listed in the SCRs - Modules range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is THYR / DIODE MODULE DK. Review the specifications below when checking this part for your BOM.
The TT570N18KOFXPSA1 is a phase control thyristor module manufactured by Infineon Technologies. It utilizes pressure contact technology and Advanced Medium Power Technology (AMPT) within an industrial standard package featuring an electrically insulated base plate. The device supports a repetitive peak forward off-state and reverse voltage of 1800 V. At a case temperature of 85°C, the maximum average on-state current rating is 566 A per arm. The surge current capability reaches 20000 A at 25°C junction temperature for a 10 ms pulse duration. Key electrical parameters include a threshold voltage of 0.8 V, a slope resistance of 0.3 mΩ, and a maximum junction-to-case thermal resistance of 0.055 K/W.
Verify the specific ordering suffix against official documentation to confirm exact configuration details. Confirm that the component meets all necessary regulatory standards for your intended deployment environment. Ensure compatibility with existing gate drive circuits regarding trigger current and voltage requirements before finalizing procurement.
Select this module based on the required voltage blocking capabilities and current handling needs for phase control applications. Evaluate the thermal management strategy carefully, considering the specified thermal resistance values and maximum junction temperature limits. Ensure the mounting torque specifications are strictly adhered to for reliable pressure contact operation.
This component belongs to the Netz-Thyristor-Modul series designed for high-power grid-connected applications. It is part of Infineon's portfolio of silicon-based power modules utilizing pressure contact technology. The module is engineered for robust performance in industrial environments requiring precise phase control and high surge current tolerance.
Consult official Infineon documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' thyristor modules without verifying pinout, thermal, and electrical parameter alignment.
The critical rate of rise of on-state current ((diT/dt)cr) is 200 A/µs according to DIN IEC 747-6 standards.
The insulation test voltage is 3.0 kV RMS at 50 Hz for 1 minute, or 3.6 kV RMS at 50 Hz for 1 second.
The maximum gate trigger current (IGT) is 250 mA at a junction temperature of 25°C and a forward voltage of 12 V.
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