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TT700N22KOFTIMHPSA1 is listed in the SCRs - Modules range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is THYR / DIODE MODULE DK BG-PB60AT. Review the specifications below when checking this part for your BOM.
The TT700N22KOFTIMHPSA1 is a phase control thyristor module from Infineon Technologies, utilizing pressure contact technology and Advanced Medium Power Technology (AMPT). It features an electrically insulated base plate with optional pre-applied thermal interface material. Key electrical parameters include a repetitive peak forward off-state and reverse voltage of 2200 V, a maximum average on-state current of 700 A at TC=85°C, and a surge current rating of 20400 A. The device has a threshold voltage of 0.85 V, slope resistance of 0.35 mΩ, and a junction-to-case thermal resistance of 0.046 K/W.
Verify the specific ordering suffix against official documentation to confirm the inclusion of pre-applied thermal interface material. Confirm that the component meets all relevant safety certifications required for the intended installation environment before finalizing procurement orders.
Select this module based on its 2200 V blocking capability and 700 A continuous current rating. Ensure the application circuit can handle the specified critical rate of rise of on-state current and verify that the thermal management system accommodates the junction-to-case thermal resistance values provided in the datasheet.
This component belongs to the network thyristor module series designed for industrial power electronics. It utilizes silicon pellets with pressure contact assembly within an industrial standard package. The module is part of a broader family of high-power semiconductor solutions used in demanding electrical environments.
Consult official replacement lists or cross-reference tools for verified substitute part numbers. Do not assume compatibility with other modules without verifying electrical and mechanical specifications against the original design requirements.
The maximum junction temperature is 135 °C.
Pre-applied thermal interface material is available as an option for this module type.
The critical rate of rise of on-state current is 200 A/µs.
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