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The U310-E3 is an N-channel JFET manufactured by Vishay Siliconix, designed for high-frequency and amplification applications. It utilizes a silicon technology base and is housed in a TO-52 package with through-hole mounting style. The component features a gate-source breakdown voltage of -25 V and operates within a temperature range of -55°C to +175°C. It belongs to the J/SST/U308 series, known for superior amplification characteristics and high-frequency performance up to 450 MHz. The device has an input capacitance of 5 pF at 10 V and is RoHS compliant.
Verify obsolescence status as commercial power MOSFETs may be subject to end-of-life notices. Confirm package compatibility and pinout alignment during integration. Ensure thermal management meets the specified junction temperature limits. Check for alternative components if long-term supply is required. Validate RoHS compliance documentation for regulatory adherence.
Select this component for applications requiring high-frequency stability and low input capacitance. Consider the TO-52 package constraints for PCB layout. Evaluate the -25 V gate-source breakdown limit against circuit requirements. Assess thermal dissipation capabilities within the specified temperature range. Compare performance metrics with other JFETs in the U308 series for optimal fit.
The U310-E3 is part of Vishay Siliconix's J/SST/U308 series of N-channel JFETs. This series is recognized for its high-frequency capabilities and amplification quality. The E3 suffix indicates lead-free and halogen-free construction, aligning with environmental standards. It serves as a discrete semiconductor solution for specialized analog and RF designs.
Public confirmed substitute part numbers are not available in the provided data.