UCC21710DWR

Overview

The UCC21710DWR is a single-channel isolated gate driver from Texas Instruments, housed in a 16-SOIC package. It provides galvanic isolation with a rating of 5.7kVrms and delivers ±10A source/sink current to drive high-voltage switches like SiC MOSFETs and IGBTs up to 1700V. Key electrical parameters include a maximum propagation delay of 130 ns, a rise time of 33 ns, and a fall time of 27 ns. The device operates within a temperature range of -40°C to +125°C and has a power dissipation of 985 mW.

Feature Summary

• Integrated overcurrent detection for fault protection
• Internal clamp circuitry designed for IGBT and SiC applications
• Capacitive coupling technology for signal isolation

Applications

• Driving Silicon Carbide (SiC) MOSFETs
• Driving Insulated Gate Bipolar Transistors (IGBTs)
• High-voltage power conversion systems

Procurement Notes

Verify the specific suffix 'R' indicates tape-and-reel packaging when ordering. Confirm that the 5.7kVrms isolation rating meets system safety requirements. Ensure the SOIC-16 footprint matches the PCB layout. Check for RoHS compliance status as indicated in official documentation.

Selection Notes

Select this component for applications requiring reinforced isolation and high peak current drive capabilities. It is suitable for designs needing integrated overcurrent protection and internal clamping for wide-bandgap semiconductors. Consider the 130 ns propagation delay for switching frequency constraints.

Part Context

This part belongs to the UCC21710 series of isolated gate drivers. It is manufactured by Texas Instruments and is available in the SOIC-16 surface-mount package. The 'DWR' designation specifies the device variant with reel packaging.

Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify pinout compatibility and isolation voltage ratings before replacing.