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The UCC21710QDWQ1 is a single-channel automotive-grade isolated gate driver featuring 5.7kVrms isolation and ±10A peak drive current. It supports IGBT and SiC MOSFETs up to 1700V with integrated overcurrent detection and internal clamping. The device operates from -40°C to +125°C in a 16-pin SOIC package, offering 130ns max propagation delay and 3V-33V supply range.
Verify the specific suffix 'QDWQ1' against official Texas Instruments documentation to confirm pinout and packaging details. Ensure the component meets required automotive reliability standards for the target application environment before integration.
Select this driver for high-voltage SiC or IGBT applications requiring advanced fault protection. It is suitable where galvanic isolation and automotive reliability are critical design constraints.
Part of the UCC21710-Q1 family designed for high-performance isolated gate driving. It complements other TI drivers by providing specialized protection features for wide-bandgap semiconductors in demanding power conversion environments.
UCC21710QDWRQ1: Same functional specifications but differs in reel packaging configuration.