SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The UCC21736QDWRQ1 is an automotive-grade, galvanically isolated single-channel gate driver designed for IGBT and SiC power devices. It features a 5.7kVrms isolation rating and delivers +/-10A peak output current. Key electrical parameters include a maximum propagation delay of 130ns, rise time of 28ns, and fall time of 24ns. The device operates within a junction temperature range of -40°C to +125°C and dissipates up to 985mW. It supports both inverting and non-inverting configurations and includes active short-circuit protection capabilities.
Verify the specific suffix 'QDWRQ1' to confirm the SOIC-16 package, tape-and-reel quantity, and automotive qualification status. Confirm that the component meets AEC-Q100 standards required for your specific vehicle grade. Check for end-of-life notices as availability may be limited due to production phase-out status.
Select this component when driving wide-bandgap semiconductors like SiC MOSFETs or IGBTs requiring high peak current and strong short-circuit withstand capability. Ensure the system design accommodates the 130ns propagation delay and utilizes the available Miller clamp functionality. Verify that the 5.7kVrms isolation voltage exceeds the system's transient overvoltage requirements.
This part belongs to the UCC21736-Q1 family of isolated gate drivers from Texas Instruments. It is specifically engineered for automotive power electronics, offering a compact 16-SOIC solution. The Q1 designation indicates compliance with automotive quality and reliability standards, distinguishing it from general industrial variants.
Consult official substitution lists for direct pin-compatible alternatives within the UCC2173x series. Verify that any replacement maintains the same isolation voltage, peak current, and active short-circuit protection features.