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The UCC21737QDWRQ1 is an automotive-grade, single-channel current-isolated gate driver designed for silicon carbide (SiC) MOSFETs and IGBTs. It features a SOIC-16 package with a maximum propagation delay of 130 ns, rise time of 33 ns, and fall time of 27 ns. The device supports supply voltages from 3 V to 33 V and operates within a temperature range of -40°C to +150°C. It provides 10 A output current capability and includes active short-circuit protection.
Verify the complete part number including the 'Q1' suffix to ensure automotive grade compliance. Confirm the 'DWR' suffix indicates the SOIC-16 package and reel packaging configuration. Cross-reference the manufacturer datasheet revision date to ensure alignment with latest electrical specifications and mechanical drawings before finalizing procurement orders.
Select this component when active short-circuit protection is required for SiC or IGBT applications. Ensure the design accommodates the 130 ns maximum propagation delay and 33 ns rise time. Verify that the operating voltage range of 3 V to 33 V matches the target gate drive requirements and that the thermal management supports the specified junction temperature limits.
This device belongs to the UCC21737-Q1 series of automotive isolated gate drivers. It is distinct from non-automotive variants by its extended temperature rating and specific qualification standards. The component is part of Texas Instruments' portfolio focused on high-performance power switching solutions for demanding automotive and industrial environments.
Consult official substitution lists for equivalent automotive-rated isolated gate drivers with similar current capabilities and protection features.