UCC21738QDWRQ1

UCC21738QDWRQ1

$4.98
  • Description:AUTOMOTIVE 10-A SINGLE-CHANNEL I
  • Series:-
  • Mfr:Texas Instruments
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:cdd57cd7083d Category: Brand:

  
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Product Detailed Parameters

  • Description:AUTOMOTIVE 10-A SINGLE-CHANNEL I
  • Series:-
  • Mfr:Texas Instruments
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:Capacitive Coupling
  • Number of Channels:1
  • Voltage - Isolation:5700Vrms
  • Propagation Delay tpLH / tpHL (Max):130ns, 130ns
  • Pulse Width Distortion (Max):30ns
  • Rise / Fall Time (Typ):33ns, 27ns
  • Current - Output High, Low:120mA, 120mA
  • Current - Peak Output:10A
  • Voltage - Forward (Vf) (Typ):-
  • Voltage - Output Supply:13V ~ 33V
  • Grade:Automotive
  • Qualification:AEC-Q100
  • Operating Temperature:-40°C ~ 125°C
  • Mounting Type:Surface Mount
  • Package / Case:16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package:16-SOIC
  • Common Mode Transient Immunity (Min):150V/µs
  • Approval Agency:IEC/EN/DIN, UL, VDE
  • Current - DC Forward (If) (Max):-

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UCC21738QDWRQ1

Overview

The UCC21738QDWRQ1 is an automotive-grade, galvanically isolated single-channel gate driver designed for silicon carbide (SiC) MOSFETs and IGBTs. It supports DC operating voltages up to 2121 V. The device features a 5700 Vrms isolation rating and delivers a peak output current of 10 A. It operates within a temperature range of -40°C to +125°C and is housed in a 16-pin SOIC package. Key electrical parameters include a maximum propagation delay of 130 ns, a rise time of 33 ns, and a fall time of 27 ns. The input supply voltage ranges from 3 V to 5.5 V.

Feature Summary

  • Provides high-voltage galvanic isolation for driving SiC MOSFETs and IGBTs in demanding environments.
  • Integrates advanced protection mechanisms to safeguard power switches during fault conditions.
  • Supports both inverting and non-inverting logic configurations for flexible system design.

Applications

  • Silicon Carbide (SiC) MOSFET gate driving
  • Insulated Gate Bipolar Transistor (IGBT) switching control
  • Automotive power electronics systems

Procurement Notes

Verify the specific suffix 'QDWRQ1' to confirm the SOIC-16 package and reel packaging configuration. Ensure the component meets AEC-Q100 automotive qualification standards required for your application. Confirm that the 5700 Vrms isolation rating aligns with your system's safety requirements. Check for moisture sensitivity level compliance during storage and handling procedures.

Selection Notes

Select this component when driving high-voltage SiC or IGBT devices requiring robust isolation. The 10 A output capability suits medium-power applications. Consider the 130 ns propagation delay for timing-sensitive circuits. The wide input voltage range allows compatibility with various logic levels. Evaluate thermal performance given the 985 mW power dissipation limit in the SOIC-16 package.

Part Context

This part belongs to the UCC2173x-Q1 family of isolated gate drivers from Texas Instruments. It shares the SOIC-16 footprint and core isolation architecture with other variants like the UCC21736QDWRQ1. Differences typically lie in specific protection features or insulation ratings. This model focuses on high-voltage SiC/IGBT applications with standard protection profiles.

Replacement Considerations

The UCC21736QDWRQ1 is a related variant within the same family. Verify if active short-circuit protection differences impact your design. Ensure pinout compatibility remains identical before substitution. Confirm that insulation voltage ratings meet or exceed original requirements.

UCC21738QDWRQ1UCC21738QDWRQ1
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