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The UCC21738QDWRQ1 is an automotive-grade, galvanically isolated single-channel gate driver designed for silicon carbide (SiC) MOSFETs and IGBTs. It supports DC operating voltages up to 2121 V. The device features a 5700 Vrms isolation rating and delivers a peak output current of 10 A. It operates within a temperature range of -40°C to +125°C and is housed in a 16-pin SOIC package. Key electrical parameters include a maximum propagation delay of 130 ns, a rise time of 33 ns, and a fall time of 27 ns. The input supply voltage ranges from 3 V to 5.5 V.
Verify the specific suffix 'QDWRQ1' to confirm the SOIC-16 package and reel packaging configuration. Ensure the component meets AEC-Q100 automotive qualification standards required for your application. Confirm that the 5700 Vrms isolation rating aligns with your system's safety requirements. Check for moisture sensitivity level compliance during storage and handling procedures.
Select this component when driving high-voltage SiC or IGBT devices requiring robust isolation. The 10 A output capability suits medium-power applications. Consider the 130 ns propagation delay for timing-sensitive circuits. The wide input voltage range allows compatibility with various logic levels. Evaluate thermal performance given the 985 mW power dissipation limit in the SOIC-16 package.
This part belongs to the UCC2173x-Q1 family of isolated gate drivers from Texas Instruments. It shares the SOIC-16 footprint and core isolation architecture with other variants like the UCC21736QDWRQ1. Differences typically lie in specific protection features or insulation ratings. This model focuses on high-voltage SiC/IGBT applications with standard protection profiles.
The UCC21736QDWRQ1 is a related variant within the same family. Verify if active short-circuit protection differences impact your design. Ensure pinout compatibility remains identical before substitution. Confirm that insulation voltage ratings meet or exceed original requirements.