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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The UCC21750DW is a single-channel galvanically isolated gate driver designed for Silicon Carbide (SiC) MOSFETs and IGBTs. It operates within a supply voltage range of 3 V to 33 V and delivers a peak output current of ±10 A. The device provides 5.7 kVrms isolation capability with a maximum propagation delay of 130 ns, rise time of 33 ns, and fall time of 27 ns. It supports both inverting and non-inverting configurations and functions reliably across an operating temperature range of -40°C to +125°C.
Verify the specific suffix 'DW' indicates tube packaging rather than reel or cut tape formats. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure design accounts for moisture sensitivity levels as indicated in the datasheet. Validate that the SOIC-16 package dimensions match the target PCB footprint requirements exactly.
Select this component when high isolation voltage and fast switching speeds are required for wide-bandgap semiconductors. The ±10 A drive strength suits medium-power applications requiring robust gate charging. Consider the thermal dissipation limits of 985 mW for board layout planning. The single-channel architecture simplifies design compared to dual-driver alternatives for basic half-bridge circuits.
This part belongs to the UCC21750 series from Texas Instruments, specialized for isolated gate driving. It complements other drivers in the lineup by offering specific protection features tailored for SiC and IGBT technologies. The DW variant specifically denotes the tube package option, distinguishing it from the DWR reel version while maintaining identical electrical performance characteristics.
The UCC21750DWR serves as a direct functional substitute differing only in packaging format (reel vs. tube). No alternative part numbers are publicly confirmed as direct replacements with identical specifications.