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The UCC27200DDAR is a half-bridge MOSFET gate driver manufactured by Texas Instruments, housed in an 8-SO-PowerPad surface-mount package. It provides independent high-side and low-side outputs with a peak output current of 3 A for both sourcing and sinking. The device operates within a supply voltage range of 8 V to 17 V and supports a maximum bootstrap voltage of 120 V. Key timing parameters include a typical rise time of 8 ns and a fall time of 7 ns. It functions with non-inverting inputs and maintains a junction temperature operating range from -40°C to +140°C.
Verify the specific suffix DDAR corresponds to the 8-SO-PowerPad package when ordering. Confirm that the component meets RoHS compliance requirements for your region. Ensure the supplier provides valid traceability documentation. Cross-reference the manufacturer part number against official Texas Instruments databases to avoid counterfeit components. Validate that the delivery condition matches the reel or cut tape specifications required for your assembly process.
Select this component when a 3 A peak drive current is sufficient for the target MOSFET gate charge. It is suitable for applications requiring a 120 V boot capability without the need for automotive qualification. Consider the thermal performance of the PowerPAD package for heat dissipation. Compare against the UCC2721x series if higher 4 A drive currents are necessary for faster switching transitions.
This device belongs to the UCC27200 family of high-speed MOSFET drivers. It shares functional similarities with the UCC27200DR but utilizes a distinct PowerPAD package variant for improved thermal management. The family is designed to replace older discrete driver solutions in compact power electronics designs.
The UCC27200DR serves as a direct pin-compatible alternative using a standard SOIC-8 package. For applications requiring higher drive strength, the UCC27211D offers 4 A outputs in a similar form factor.