UCC27200DDAR

UCC27200DDAR

$1.52
  • Description:IC GATE DRVR HALF-BRIDGE 8SOPWR
  • Series:-
  • Mfr:Texas Instruments
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:6fc420c51647 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IC GATE DRVR HALF-BRIDGE 8SOPWR
  • Series:-
  • Mfr:Texas Instruments
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Driven Configuration:Half-Bridge
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:MOSFET (N-Channel)
  • Voltage - Supply:8V ~ 17V
  • Logic Voltage - VIL, VIH:3V, 8V
  • Current - Peak Output (Source, Sink):3A, 3A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):8ns, 7ns
  • Operating Temperature:-40°C ~ 140°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerSOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO PowerPad
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):120 V

Download product information

UCC27200DDAR

Overview

The UCC27200DDAR is a half-bridge MOSFET gate driver manufactured by Texas Instruments, housed in an 8-SO-PowerPad surface-mount package. It provides independent high-side and low-side outputs with a peak output current of 3 A for both sourcing and sinking. The device operates within a supply voltage range of 8 V to 17 V and supports a maximum bootstrap voltage of 120 V. Key timing parameters include a typical rise time of 8 ns and a fall time of 7 ns. It functions with non-inverting inputs and maintains a junction temperature operating range from -40°C to +140°C.

Feature Summary

  • Supports independent driving of two N-channel MOSFETs in a half-bridge configuration
  • Handles negative voltage transients on the high-side input pin
  • Features fast switching speeds with nanosecond-level propagation delays

Applications

  • High-frequency power conversion circuits
  • Industrial motor drive systems
  • Inverter topologies requiring robust gate control

Procurement Notes

Verify the specific suffix DDAR corresponds to the 8-SO-PowerPad package when ordering. Confirm that the component meets RoHS compliance requirements for your region. Ensure the supplier provides valid traceability documentation. Cross-reference the manufacturer part number against official Texas Instruments databases to avoid counterfeit components. Validate that the delivery condition matches the reel or cut tape specifications required for your assembly process.

Selection Notes

Select this component when a 3 A peak drive current is sufficient for the target MOSFET gate charge. It is suitable for applications requiring a 120 V boot capability without the need for automotive qualification. Consider the thermal performance of the PowerPAD package for heat dissipation. Compare against the UCC2721x series if higher 4 A drive currents are necessary for faster switching transitions.

Part Context

This device belongs to the UCC27200 family of high-speed MOSFET drivers. It shares functional similarities with the UCC27200DR but utilizes a distinct PowerPAD package variant for improved thermal management. The family is designed to replace older discrete driver solutions in compact power electronics designs.

Replacement Considerations

The UCC27200DR serves as a direct pin-compatible alternative using a standard SOIC-8 package. For applications requiring higher drive strength, the UCC27211D offers 4 A outputs in a similar form factor.

UCC27200DDARUCC27200DDAR
$1.52
Buy Now