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The UCC28070DWR is a two-phase interleaved continuous conduction mode (CCM) power factor correction controller manufactured by Texas Instruments. It integrates two pulse width modulators operating in anti-phase to reduce input and output ripple currents, simplifying EMI filtering. The device supports a programmable switching frequency range from 30 kHz to 300 kHz and features frequency jitter for enhanced electromagnetic interference reduction. It operates within a supply voltage range of 11.2 V to 21 V and functions reliably across an extended temperature range of -40°C to +125°C. Packaged in a 20-pin SOIC format, it includes advanced protection mechanisms such as UVLO, overvoltage protection, and open-loop detection.
Verify the specific suffix 'DWR' corresponds to the tape-and-reel packaging configuration when sourcing components. Confirm that the required operating temperature range aligns with the specified industrial limits. Ensure compatibility with the UCC28070EVM development kit for initial design validation. Cross-reference pin assignments against the official datasheet to prevent integration errors during PCB layout.
Select this component for designs requiring precise current matching between phases without external calibration. The integrated current synthesizer improves efficiency compared to traditional sensing methods. Consider the programmable frequency range if system constraints demand operation outside standard ranges. Evaluate the need for external clock synchronization based on system timing requirements.
This part belongs to the UCC28070 family of power management ICs designed for advanced power factor correction applications. It serves as a specialized controller for interleaved topologies, distinguishing itself from single-phase alternatives through its dual-PWM architecture. The device is categorized under PMIC solutions for efficient energy conversion in demanding electronic environments.
Public confirmed substitute part numbers include UCC28070DW and UCC28070PW. Verify package compatibility and thermal characteristics when transitioning between SOIC and TSSOP variants.