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The UCC57102WQDRQ1 is an automotive-grade, single-channel low-side gate driver designed for high-power applications. It delivers a typical peak drive current of 3A source and 3A sink. The device operates with a bias supply voltage range from 8.5V to 26V and supports input logic levels compatible with CMOS and TTL standards. It features non-inverting configuration with propagation delays up to 50ns. The component is housed in an SOIC-8 package and is rated for operation within a junction temperature range of -40°C to +125°C.
Verify the specific suffix 'WQDRQ1' against the manufacturer's official datasheet to confirm pinout and feature set alignment. Ensure the procurement channel provides valid traceability documentation required for automotive-grade components. Confirm that the delivered units match the specified SOIC-8 package and temperature rating before integration into production designs.
Select this component when designing systems requiring robust low-side switching with integrated fault protection. It is suitable for driving IGBTs or SiC MOSFETs where moderate drive strength is sufficient. Consider its wide input voltage tolerance for environments with significant ground bounce. Verify that the application does not require higher peak currents than the 3A limit provided by this device.
This part belongs to the UCC5710x-Q1 family of high-speed low-side gate drivers from Texas Instruments. The series is engineered for demanding power electronics in electric vehicles and industrial motor control. It shares core architectural similarities with other members like the UCC57102ZDR but differs in specific protection features and bias voltage requirements defined by the model suffix.
Direct substitutes within the same family include UCC57102DRQ1. Verify functional equivalence regarding desaturation protection and bias voltage ranges before substitution.