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The UCC57108BQDRQ1 is an automotive-grade, single-channel low-side gate driver designed for high-power applications. It features a typical peak drive strength of 3A source and sink current, supporting IGBT and SiC devices. The device incorporates desaturation (DESAT) protection with programmable delay, under-voltage lockout (UVLO), and thermal shutdown. It operates within a bias voltage range of 8.5V to 26V and supports input voltages down to -5V for robustness against ground bounce. The component is qualified to AEC-Q100 standards and functions across a junction temperature range of -40°C to +150°C.
Verify the specific suffix 'BQDRQ1' matches the required package variant and automotive grade designation. Confirm that the SOIC-8 package dimensions align with PCB layout constraints. Ensure the design accounts for the specified thermal operating limits and bias voltage requirements for proper UVLO and DESAT functionality.
Select this component for applications requiring isolated or non-isolated low-side driving with integrated fault protection. The 3A drive strength suits medium-power IGBTs and SiC MOSFETs. Consider the wide input tolerance if the control signal originates from a controller with significant ground potential differences relative to the driver ground.
This part belongs to the UCC5710x-Q1 family of high-speed low-side gate drivers from Texas Instruments. It shares core architectural features with other members like the UCC57102QDRQ1 but offers specific pin configurations and protection features tailored for demanding power conversion tasks in electric vehicles and industrial motor drives.
UCC57102QDRQ1