UJ3N120070K3S

Overview

The UJ3N120070K3S is a silicon carbide (SiC) JFET manufactured by onsemi, designed for high-power applications. It features an N-channel configuration in a TO-247-3 through-hole package. Key electrical parameters include a drain-source breakdown voltage of 1.2 kV and a gate-source breakdown voltage of 20 V. The device supports a continuous drain current of 33.5 A with a maximum on-resistance of 70 mOhms. It operates within a temperature range of -55°C to +175°C and has a power dissipation rating of 254 W. The component is AEC-Q101 qualified.

Feature Summary

• Utilizes silicon carbide technology for superior thermal performance and efficiency compared to traditional silicon devices.
• Features a depletion-mode N-channel architecture suitable for hard-switching and soft-switching topologies.
• Includes integrated gate protection mechanisms to enhance reliability against electrostatic discharge events.

Applications

• High-efficiency solar inverters
• Uninterruptible power supply systems
• Electric vehicle charging infrastructure
• Industrial motor drives

Procurement Notes

Verify the specific ordering suffix K3S to confirm the tube packaging format and lead time requirements. Ensure compatibility with the intended PCB footprint for the TO-247-3 package. Confirm that the design accounts for the depletion-mode operation characteristics during gate drive circuit implementation. Check for any recent product change notices regarding material composition or manufacturing site changes.

Selection Notes

Select this component when a robust, normally-on SiC switch is required for high-voltage environments. The 1.2 kV rating provides sufficient headroom for 600 V and 800 V bus systems. Consider the 70 mOhm on-resistance for conduction loss calculations in medium-current applications. The TO-247-3 package facilitates efficient heat sinking for high-power density designs.

Part Context

This part belongs to the UJ3N series of silicon carbide JFETs from onsemi. These devices are engineered to replace silicon IGBTs and MOSFETs in demanding power conversion applications. The series offers improved switching speeds and reduced thermal resistance, enabling higher system efficiency and compact form factors in energy infrastructure and automotive electronics.

Replacement Considerations

Direct pin-to-pin replacements may be limited due to the specific depletion-mode characteristic. Verify that alternative SiC JFETs or common-gate driven configurations meet the 1.2 kV voltage rating and 33.5 A current requirements. Ensure gate drive circuits are adjusted for the normally-on nature if substituting with enhancement-mode devices.

FAQ

Is the UJ3N120070K3S an enhancement-mode or depletion-mode device?

It is a depletion-mode device, meaning it conducts current when the gate-source voltage is zero and requires a negative voltage to turn off.

What is the maximum junction temperature for this component?

The maximum operating junction temperature is +175°C, allowing for reliable operation in high-temperature environments.

Does this component have AEC-Q101 qualification?

Yes, the UJ3N120070K3S is AEC-Q101 qualified, making it suitable for automotive applications.