UM4001E

RF Diode Overview

The UM4001E is a high-power silicon PIN diode from the UM4000 series, designed for HF through S-band applications. It features a reverse voltage rating of 100 V at 10 uA leakage current and supports power dissipation up to 25 W with a thermal resistance of 6 °C/W at 25°C pin temperature. The device exhibits a typical forward voltage of 1.0 V at 100 mA, series resistance of 0.3 to 0.5 Ω at 100 MHz, and capacitance of approximately 3 pF at 100 V reverse bias. Carrier lifetime exceeds 5 µs, enabling control of high RF levels with low bias currents.

RF Diode Feature Summary

• High charge storage and long carrier lifetime enable high RF level control with relatively low bias current
• Handles peak RF voltages well in excess of applied reverse bias voltage
• Low conductance and low capacitance at zero bias voltage
• Non-cavity design with thermally matched configuration

RF Diode Applications

• Low distortion switches and attenuators in HF through S band frequencies
• High power UHF phase shifters and megawatt peak-power duplexers
• Antenna selectors and couplers involving filter or cavity networks

RF Diode Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance status, as standard UM4000 series devices utilize Sn/Pb finish while compliant versions require the UMX prefix. Ensure ordering suffixes match specific package styles such as stud or surface mount configurations required for the application.

RF Diode Selection Notes

Select the UM4001E when 100 V reverse blocking capability is sufficient for the circuit requirements. Consider the UM4901 equivalent if higher power dissipation ratings are needed due to its shorter thermal path. Evaluate thermal management needs based on the specific mounting style and ambient operating conditions to ensure reliable performance within absolute maximum ratings.

RF Diode Part Context

The UM4001E belongs to the UM4000 series of high-power PIN diodes manufactured by Microsemi. This series is characterized by thick I-regions and long carrier lifetimes, distinguishing it from standard rectifier diodes. The UM4000 series serves as the baseline for electrical performance, while the parallel UM4900 series offers enhanced power handling capabilities through improved thermal packaging designs.

RF Diode Replacement Considerations

The UM4901 is electrically equivalent to the UM4001 but provides higher power ratings due to a shorter thermal path between the chip and package. For RoHS compliant replacements, use the UMX4001 variant which maintains identical electrical characteristics with a matte tin finish.