UM7108B

RF Diode Overview

The UM7108B is a silicon PIN diode from the UM7100 series, manufactured by Microchip Technology. It features an 800 V reverse voltage rating and a maximum diode capacitance of 1.2 pF. The device has a maximum series resistance of 600 mOhms at mid-frequency and a carrier lifetime of 2 µs. Reverse current is specified at 10 uA. It operates within a temperature range of -65°C to +175°C. The component is designed for high power applications in RF and microwave circuits.

RF Diode Feature Summary

• High power handling capability combined with low series resistance and capacitance
• Suitable for RF and microwave switch and attenuator circuits
• Compatible with automated assembly processes

RF Diode Applications

• RF switch circuits
• Microwave attenuator circuits
• High power switching applications

RF Diode Procurement Notes

Verify the specific package type and lead time directly with authorized distributors or Microchip Technology. Confirm RoHS compliance status and check for any recent Product Change Notifications (PCN) that may affect specifications or manufacturing location before finalizing procurement orders.

RF Diode Selection Notes

Select the UM7108B when an 800V breakdown voltage is required alongside low capacitance for high-frequency performance. Compare against the UM7108F if hermetic sealing is necessary. Ensure the 600 mOhm series resistance meets the insertion loss requirements of the target RF circuit design.

RF Diode Part Context

The UM7108B belongs to the UM7100 series of high power PIN diodes. This series offers moderately high power handling with low series resistance and capacitance. The UM7100 series differs from the UM7000 and UM7200 series primarily through variations in I-region thickness, which dictates the specific electrical characteristics of each model.

RF Diode Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with similar models such as UM7104F or UM7106F based on voltage ratings and package constraints.