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The UMA1NTR is a dual pre-biased PNP bipolar junction transistor array manufactured by ROHM Semiconductor. It integrates two PNP transistors with built-in bias resistors in a compact SMD package. Key electrical parameters include a collector-emitter breakdown voltage of 50V, a continuous collector current of 100mA, and a transition frequency of 250MHz. The device features a minimum DC current gain (hFE) of 56 at 5mA/5V and a maximum saturation voltage of 300mV at specific test conditions. Each transistor includes a typical base resistor of 22kΩ. Power dissipation is rated at 150mW, with an operating temperature range up to +150°C.
Verify the exact ordering suffix and tape/reel specifications against the manufacturer's latest datasheet before procurement. Confirm RoHS compliance status and ensure the component meets automotive or industrial qualification requirements if applicable to the target application. Check for any end-of-life notices or recommended replacement parts.
Select this component when a dual PNP configuration with integrated biasing is required. Ensure the 50V collector-emitter voltage and 100mA current ratings exceed the circuit demands. Verify that the 22kΩ internal base resistance aligns with the driving source impedance and desired switching speed. Consider the UMT5 package dimensions for PCB layout constraints.
The UMA1NTR belongs to ROHM's series of pre-biased transistors designed to replace discrete resistor-transistor networks. These components reduce board space and assembly costs by integrating passive elements directly onto the semiconductor die. The part is commonly used in consumer electronics and industrial control systems where small form factors are critical.
Consult ROHM's official substitution guide for equivalent digital transistors. Verify pin compatibility and electrical parameter overlap with potential replacements from other manufacturers if sourcing constraints exist.