UMA4NT1G

UMA4NT1G

$0.04
  • Description:TRANS 2PNP PREBIAS 0.15W SC70
  • Series:-

SKU:8bd1c2c885d4 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP PREBIAS 0.15W SC70
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package:SC-88A (SC-70-5/SOT-353)

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UMA4NT1G

Overview

The UMA4NT1G is a dual PNP pre-biased bipolar junction transistor (BJT) array manufactured by onsemi. It integrates two PNP transistors with integrated base biasing resistors into a single compact package, designed to simplify circuit design and reduce component count. The device features a maximum collector-emitter voltage (Vceo) of 50 V and a continuous collector current (Ic) of 100 mA per transistor. It operates within a temperature range of -55°C to +150°C for the junction and storage temperatures. The unit is housed in an SC-88A (SC-70-5/SOT-353) surface-mount package, offering a total power dissipation of 0.15 W.

Feature Summary

  • Integrates dual PNP transistors with built-in base biasing resistors to minimize external components
  • Optimized for low-power switching applications with high reliability
  • Compact surface-mount packaging suitable for space-constrained designs

Applications

  • General-purpose switching circuits
  • Signal level shifting interfaces
  • Low-power logic driver stages

Procurement Notes

Verify the exact datasheet revision and electrical parameter tolerances against the specific batch requirements. Confirm that the SC-88A package dimensions align with the PCB footprint constraints. Ensure thermal management capabilities are sufficient for the intended operating conditions, considering the 0.15 W power dissipation limit. Cross-reference the pinout configuration to prevent installation errors during assembly.

Selection Notes

Select this component when a dual PNP configuration with integrated biasing is required to save board space. It is suitable for applications needing moderate voltage handling up to 50 V and currents up to 100 mA. Consider its thermal performance and package size relative to other available BJT arrays. Evaluate if the pre-biased nature meets the specific drive requirements of the target circuit without additional external resistor components.

Part Context

The UMA4NT1G belongs to the family of discrete semiconductor devices produced by onsemi, formerly Fairchild Semiconductor. It falls under the category of dual bipolar junction transistor arrays with pre-biasing. These components are widely used in consumer electronics and industrial equipment where reliable switching and signal processing are essential. The product line emphasizes robustness and ease of integration for various electronic systems.

Replacement Considerations

Check for direct equivalents from other manufacturers offering identical pinouts and electrical specifications in the SC-88A package. Verify compatibility regarding Vceo, Ic, and power dissipation ratings before substitution.

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