UMB10NTN

Overview

The UMB10NTN is a dual pre-biased NPN digital transistor manufactured by Rohm Semiconductor. It integrates two NPN transistors with built-in biasing resistors in a compact SOT-363 (UMT6) surface-mount package. Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The device features a typical input resistance of 2.2 kΩ and a DC current gain (hFE) minimum of 80 at 10mA and 5V. It supports a maximum operating frequency of 250MHz with a power dissipation rating of 150mW.

Feature Summary

• Dual NPN configuration with integrated base and emitter resistors for simplified circuit design
• High-speed switching capability suitable for frequencies up to 250MHz
• Compact SMD packaging designed for space-constrained applications

Applications

• General-purpose signal switching and level shifting
• Driver circuits for low-power loads
• Logic interface buffering between different voltage domains

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure the component meets RoHS3 compliance requirements if mandated by the target application standards. Cross-reference the supplier's documentation to confirm the presence of ESD protection data and reliability test results relevant to the production batch.

Selection Notes

Select this component when a dual NPN solution with fixed biasing is required to reduce external component count. Verify that the 50V voltage rating and 100mA current capacity align with the load requirements. Consider the SOT-363 footprint constraints during PCB layout. Confirm thermal management capabilities given the 150mW power dissipation limit under expected operating conditions.

Part Context

This part belongs to the UMB10N series of complex transistors from Rohm Semiconductor. These devices are designed as replacements for discrete resistor-transistor combinations, offering improved performance and reduced board space. The series includes various configurations tailored for high-frequency and general-purpose switching applications.

Replacement Considerations

Direct substitutes may include other dual NPN pre-biased transistors in SOT-363 packages with matching 50V/100mA ratings. Verify equivalent internal resistor values and hFE characteristics to ensure circuit compatibility without redesign.