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The UMB11NFHATN is a dual complex transistor from ROHM Semiconductor, featuring two PNP transistors integrated into a single SOT-363 (UMT6) surface-mount package. It is designed for high-density circuit applications with a collector-emitter voltage of -50V and continuous collector current of -100mA per transistor. The device includes built-in bias resistors, typically 10kΩ for both base and emitter-base configurations. Key electrical parameters include a maximum power dissipation of 150mW, a DC current gain (hFE) minimum of 120 at specified conditions, and a transition frequency up to 250MHz. It operates within a temperature range of -55°C to +150°C.
Verify the specific suffix 'TN' indicates tape-and-reel packaging when ordering. Confirm AEC-Q101 automotive qualification status if required for your application. Check RoHS compliance documentation for environmental regulations. Ensure compatibility with SOT-363 footprint during PCB layout. Validate supply chain authenticity through authorized distributors.
Select this component for designs requiring dual PNP switching with minimal board space. Compare input resistance values against other UMB series variants like UMB11N for standard vs. automotive grades. Consider the 10kΩ resistor ratio for biasing requirements. Evaluate thermal performance under maximum power dissipation constraints.
The UMB11NFHATN belongs to ROHM's UMB series of dual digital transistors. It shares the UMT6 package form factor with similar NPN counterparts like the UMH11NFHATN. The 'FHA' designation typically indicates automotive-grade reliability standards. This part serves as a compact alternative to discrete PNP transistor pairs in signal processing and control circuits.
Direct substitutes include the UMB11N for non-automotive applications. For equivalent NPN functionality, consider the UMH11NFHATN. Verify pinout compatibility and electrical parameter overlaps before substitution. Check manufacturer datasheets for any updated revisions or pinning changes.