SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The UMB11NTN is a dual complex transistor manufactured by ROHM Semiconductor, featuring two integrated NPN transistors within a compact SOT-363 (UMT6) surface-mount package. It operates with a maximum collector-emitter voltage of 50V and supports a continuous collector current of 100mA per channel. The device includes built-in biasing resistors, typically 1kΩ for both input (R1) and emitter-base (R2), simplifying circuit design. With a power dissipation rating of 150mW and a maximum operating temperature of +150°C, it is suitable for high-density applications requiring small signal switching and amplification.
Verify the specific suffix 'TN' confirms the taping reel packaging format with a standard quantity of 3000 units. Confirm RoHS compliance status through official datasheets or manufacturer declarations prior to integration. Ensure the sourcing channel provides valid traceability documentation for quality assurance purposes.
Select this component when space constraints require a dual NPN configuration with integrated biasing. Compare internal resistor values against circuit requirements to ensure proper drive characteristics. Verify that the 150mW power dissipation limit accommodates the thermal conditions of the final assembly.
This part belongs to the UMB11 series of complex transistors from ROHM Semiconductor. These devices are designed as replacements for discrete transistor arrays, offering improved consistency and reduced assembly time. The UMT6 package is widely used in portable electronics and consumer appliances where miniaturization is critical.
Publicly confirmed equivalent single-part numbers include DTA114E. Designers should verify pin compatibility and internal resistor tolerances when substituting with other manufacturers' dual NPN digital transistors.