UMB11NTN

UMB11NTN

$0.40
  • Description:TRANS PREBIAS DUAL PNP UMT6
  • Series:-

SKU:8f17888cc962 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS PREBIAS DUAL PNP UMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:UMT6

Download product information

UMB11NTN

Overview

The UMB11NTN is a dual complex transistor manufactured by ROHM Semiconductor, featuring two integrated NPN transistors within a compact SOT-363 (UMT6) surface-mount package. It operates with a maximum collector-emitter voltage of 50V and supports a continuous collector current of 100mA per channel. The device includes built-in biasing resistors, typically 1kΩ for both input (R1) and emitter-base (R2), simplifying circuit design. With a power dissipation rating of 150mW and a maximum operating temperature of +150°C, it is suitable for high-density applications requiring small signal switching and amplification.

Feature Summary

  • Integrates two independent NPN transistors in a single ultra-small package to reduce component count and PCB area.
  • Includes built-in base and emitter-base resistors to eliminate external biasing components and simplify layout.
  • Supports high-temperature operation up to 150°C for reliability in demanding environments.

Applications

  • Differential amplifier circuits
  • High-frequency crystal oscillator drivers
  • General-purpose signal switching and buffering

Procurement Notes

Verify the specific suffix 'TN' confirms the taping reel packaging format with a standard quantity of 3000 units. Confirm RoHS compliance status through official datasheets or manufacturer declarations prior to integration. Ensure the sourcing channel provides valid traceability documentation for quality assurance purposes.

Selection Notes

Select this component when space constraints require a dual NPN configuration with integrated biasing. Compare internal resistor values against circuit requirements to ensure proper drive characteristics. Verify that the 150mW power dissipation limit accommodates the thermal conditions of the final assembly.

Part Context

This part belongs to the UMB11 series of complex transistors from ROHM Semiconductor. These devices are designed as replacements for discrete transistor arrays, offering improved consistency and reduced assembly time. The UMT6 package is widely used in portable electronics and consumer appliances where miniaturization is critical.

Replacement Considerations

Publicly confirmed equivalent single-part numbers include DTA114E. Designers should verify pin compatibility and internal resistor tolerances when substituting with other manufacturers' dual NPN digital transistors.

UMB11NTNUMB11NTN
$0.40
Buy Now