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The UMB1N-TP is a dual PNP pre-biased bipolar junction transistor (BJT) array manufactured by Micro Commercial Components. It integrates two PNP transistors with internal biasing resistors within a compact SOT-363 surface-mount package. The device supports a collector-emitter voltage of 50V and a continuous collector current of 100mA. It features a transition frequency of 200MHz and a total power dissipation rating of 150mW, making it suitable for high-speed switching applications requiring minimal external components.
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Select this component when a dual PNP configuration with integrated biasing is required for space-constrained designs. Consider the 50V voltage rating and 100mA current limit to ensure compatibility with load requirements. Evaluate the thermal performance within the 150mW dissipation limit under expected operating conditions.
This part belongs to the UMB series of pre-biased digital transistors from Micro Commercial Components. These devices are designed to replace discrete resistor-transistor networks, offering improved reliability and reduced assembly costs. The UMB1N-TP specifically addresses applications needing dual PNP functionality in a small footprint.
The UMB1NHE3-TP is a confirmed equivalent variant within the same family, offering identical electrical characteristics with RoHS compliance enhancements.