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The UMB1NTN is a dual PNP digital transistor manufactured by ROHM Semiconductor, housed in a compact SOT-363 (UMT6) surface-mount package. This component integrates two independent PNP bipolar junction transistors with built-in biasing resistors to simplify circuit design. Key electrical specifications include a collector-emitter voltage of -50V and a continuous collector current of -100mA per transistor. The device features a typical base input resistance of 10kΩ and an emitter-base resistance of 10kΩ. It operates within a maximum power dissipation of 150mW and supports a maximum operating temperature of +150°C, making it suitable for high-density logic applications.
Verify the specific suffix and tape/reel configuration during sourcing to ensure compatibility with automated assembly processes. Confirm RoHS compliance status and check for any end-of-life notifications or recommended replacement parts from the manufacturer before finalizing procurement plans.
Select this component when designing space-constrained digital circuits that require dual PNP switching capabilities. Ensure the required input resistance matches the 10kΩ specification provided. Consider thermal management requirements given the 150mW power dissipation limit in the small SOT-363 package.
This part belongs to ROHM's UMB series of digital transistors, which are designed to replace discrete resistor-transistor networks. The UMT6/SOT-363 packaging allows for significant board space savings compared to individual components. It serves as a functional equivalent to other dual PNP digital transistor arrays in similar packages.
Check for pin-compatible alternatives such as the UMB2NTN or UMB6NTR if different resistance values or NPN configurations are needed. Verify that substitute parts maintain the same -50V rating and -100mA current capacity.