SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The UMB2NTN is a dual pre-biased PNP digital transistor manufactured by ROHM Semiconductor. It integrates two independent PNP transistors with built-in biasing resistors in a compact SMD package. Key electrical parameters include a collector-emitter breakdown voltage (VCEO) of -50 V, a continuous collector current (Ic) of -100 mA, and a maximum power dissipation (Pd) of 150 mW. The device features a typical input resistance (R1) of 47 kOhms and an emitter-base resistance (R2) of 47 kOhms. It operates up to a transition frequency of 250 MHz and has a minimum DC current gain (hFE) of 68 at Ic = 5 mA and Vce = -5 V.
Verify the specific ordering suffix to confirm packaging type, such as tape-and-reel quantities. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Ensure the part number matches the required voltage and current ratings for the target application before procurement.
Select this component when a dual PNP configuration with integrated biasing is required in a minimal footprint. Compare the 47 kOhm input resistance against other models if different drive currents are needed. Verify that the -50 V rating and -100 mA current capacity exceed the maximum operational requirements of the circuit.
The UMB2NTN belongs to the UMB2 series of complex transistors from ROHM. These devices are designed to replace multiple discrete components, offering space savings in portable electronics. The series typically includes various resistor combinations and transistor polarities to suit different logic interface needs.
Direct substitutes may include other dual PNP digital transistors in the SOT-363/UMT6 package with similar electrical characteristics. Verify pin compatibility and resistor values before substitution. Alternative part numbers should be confirmed through official cross-reference data.