UMB3NFHATN

Overview

The UMB3NFHATN is a dual pre-biased NPN digital transistor array manufactured by ROHM Semiconductor. It integrates two NPN transistors with built-in bias resistors in a compact SOT-363 (UMT6) surface-mount package. The device supports a collector-emitter voltage of 50V and a continuous collector current of 100mA. Key electrical parameters include a transition frequency of 250MHz, maximum power dissipation of 150mW, and a minimum DC current gain (hFE) of 100 at 1mA and 5V. It features a base resistance of 4.7kΩ and meets AEC-Q101 automotive grade standards.

Feature Summary

• Integrates dual NPN transistors with built-in bias resistors for simplified circuit design
• Automotive-grade qualification compliant with AEC-Q101 reliability standards
• Compact SOT-363 surface-mount package suitable for space-constrained applications

Applications

• Automotive electronic control units requiring robust switching components
• General-purpose logic level shifting and interface circuits
• High-frequency signal processing due to 250MHz transition frequency

Procurement Notes

Verify the complete part number including suffixes such as 'TN' or 'TR' to ensure correct packaging configuration. Confirm AEC-Q101 compliance requirements if deploying in automotive environments. Cross-reference datasheet revision dates to ensure parameter consistency with existing designs.

Selection Notes

Select this component when dual NPN switching with integrated biasing is required in a small footprint. Ensure the 50V voltage rating and 100mA current capacity meet circuit demands. Consider the 4.7kΩ base resistance value for input drive compatibility. Verify thermal management capabilities given the 150mW power dissipation limit in the SOT-363 package.

Part Context

This component belongs to ROHM's UMB series of complex transistors designed for high-density PCB layouts. The UMT6 package variant offers terminal density advantages over larger packages while maintaining automotive reliability. It serves as a pre-biased alternative to discrete resistor-transistor combinations.

Replacement Considerations

Check for direct pin-compatible alternatives within the same ROHM UMB family. Verify equivalent electrical characteristics such as VCEO, IC, and hFE when substituting with other manufacturers' dual NPN digital transistors.