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The UMB3NTN is a dual PNP digital transistor array manufactured by ROHM Semiconductor, housed in a compact SOT-363 (UMT6) surface-mount package. It integrates two independent PNP transistors with built-in biasing resistors to simplify circuit design. Key electrical specifications include a collector-emitter voltage of -50V and a continuous collector current of -100mA per device. The internal base resistors are typically 1kΩ and 4.7kΩ. The component features a maximum power dissipation of 150mW and supports operating temperatures up to +150°C.
Verify the RoHS compliance status directly with the manufacturer or authorized distributors before procurement, as documentation indicates detailed verification is required. Confirm that the specific batch meets environmental standards relevant to your manufacturing process. Ensure compatibility with automated placement equipment given the small UMT6 footprint.
Select this component when space constraints require a dual PNP configuration with integrated biasing. It serves as a direct replacement for single PNP digital transistors like the DTA143T in dual-channel designs. Consider the -50V rating and 100mA current limit for appropriate load matching. Verify that the 1kΩ/4.7kΩ resistor values align with the driving logic levels of the upstream circuitry.
The UMB3NTN belongs to the UMB series of complex transistors from ROHM Semiconductor. This series focuses on miniaturization by combining multiple discrete functions into small packages like the SC-88/SOT-363. It is categorized under standard-grade products intended for general consumer electronics rather than automotive applications.
The DTA143T is listed as an equivalent single-part alternative for individual channels. For dual configurations, verify pinout compatibility with other SOT-363 PNP arrays from different manufacturers if sourcing alternatives.