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The UMB4NFHATN is a dual pre-biased PNP transistor array manufactured by ROHM Semiconductor, housed in a surface-mount UMT6 (SOT-363) package. It features an AEC-Q101 automotive qualification and operates with a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The device integrates two internal base resistors, each with a typical value of 10 kOhms, to simplify circuit design. Key electrical characteristics include a transition frequency of 250MHz, a maximum power dissipation of 150mW, and a DC current gain (hFE) of at least 100 at 1mA and 5V. The saturation voltage is specified at a maximum of 300mV under specific load conditions.
Verify the complete part number including the suffix to ensure correct packaging and automotive grade compliance. Confirm that the UMT6 package dimensions match the PCB footprint requirements. Check for RoHS compliance status and ensure the supplier provides valid traceability documentation for automotive applications.
Select this component when a dual PNP digital transistor with built-in biasing is required in a small SOT-363 form factor. Ensure the application voltage does not exceed 50V and the current demand stays within the 100mA limit. Consider the 10kOhm base resistance value for input impedance matching and drive current calculations.
This part belongs to the UMB4 series of complex transistors from ROHM Semiconductor. It serves as a compact alternative to discrete resistor-transistor combinations, reducing board space and assembly complexity. The UMT6 package allows for high-density mounting in portable and automotive electronics where size constraints are critical.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical parameters before considering any generic equivalents.