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The UMB8NTR is a dual pre-biased PNP bipolar transistor array from ROHM Semiconductor, housed in an SMD/SMT UMT6 (SOT-363-6) package. It features a typical input resistor of 10 kOhms and supports a maximum operating frequency of 250 MHz. Key electrical parameters include a collector-emitter breakdown voltage of 50 V, continuous collector current of 100 mA, and power dissipation of 150 mW. The saturation voltage is specified as 300 mV at 1 mA base and 10 mA collector currents.
Verify the specific suffix 'TR' indicates reel packaging when ordering. Confirm RoHS compliance status through official documentation. Check lifecycle status as some sources indicate 'Not For New' or NRND classifications. Ensure the supplier provides genuine ROHM Semiconductor parts with traceable date codes to avoid counterfeit components.
Select this component for designs requiring dual PNP switching with integrated biasing. Compare input resistance values against other series members like UMB6NTR if different drive currents are needed. Verify that the 50 V rating and 100 mA current capacity meet the application's peak load requirements before finalizing the BOM.
This part belongs to the UMB8N series of pre-biased digital transistors. It shares the UMT6 package form factor with similar devices but differs in internal resistor values and polarity. The series is designed to replace discrete resistor-transistor combinations, reducing board space and component count in modern electronic assemblies.
UMB6NTR is a documented alternative within the same family, featuring a 47 kOhm input resistor instead of 10 kOhms. Verify pin compatibility and electrical parameter differences before substitution. No other direct substitutes are confirmed in public data.