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The UMB9NHE3-TP is a dual pre-biased digital transistor containing two PNP transistors in an SOT-363 package. It features a maximum supply voltage (Vcc) of -50V and an input voltage range of -40V to +6V. The device supports a continuous collector current of -100mA with a power dissipation of 150mW. Electrical characteristics include a DC current gain (hFE) of at least 68 at -5mA and -5V, and a saturation voltage (Vce) of -0.3V max at -1mA. It operates within a junction temperature range of -55°C to +150°C.
Verify component authenticity by sourcing exclusively from Micro Commercial Components or their authorized distributors. Ensure the ordering suffix '-TP' corresponds to the RoHS-compliant tape and reel packaging variant. Confirm that the specific batch meets the Halogen-free definition of less than 100ppm antimony compounds and zero ppm bromine/chlorine.
Select this component when a dual PNP configuration with integrated base biasing is required in a compact SOT-363 footprint. The -50V rating suits low-voltage digital control systems. Verify that the -100mA collector current capability aligns with the load requirements. Consider the 150mW power dissipation limit and thermal resistance of 333°C/W when designing the PCB layout for adequate heat management.
This part belongs to the UMD9/UMB9 series of pre-biased digital transistors manufactured by MCC. It shares the SOT-363 package form factor with other devices in the lineup but differs in internal transistor polarity and resistor values. The 'H' in the model number indicates the Halogen-free and RoHS-compliant manufacturing process.
Direct substitutes include UMD9NHE3-TP (dual NPN/PNP) and UMH9NHE3-TP (dual NPN), provided the circuit design accommodates the respective transistor polarities and internal resistor configurations.