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The UMB9NTN is a dual PNP complex digital transistor manufactured by ROHM Semiconductor. It integrates two independent PNP transistors with built-in biasing resistors within a compact SOT-363 (UMT6) surface-mount package. The device supports a collector-emitter voltage of -50V and a continuous collector current of -100mA per transistor. Key electrical parameters include a DC current gain (hFE) minimum of 68 at -5mA and -5V, a maximum operating frequency of 250MHz, and a power dissipation rating of 150mW. The typical input resistance (R1) is 10kΩ, and the emitter-base resistance (R2) is 47kΩ.
Verify the specific suffix against the official datasheet to confirm pinout and electrical tolerances. Ensure the ordering code matches the required packaging format, such as tape and reel or cut tape, as specified by the manufacturer. Confirm RoHS compliance status for the specific batch before procurement.
Select this component for designs requiring dual PNP switching with integrated biasing. Compare R1 and R2 values against other UMB series variants to ensure compatibility with existing logic levels. Verify that the -50V rating and -100mA current capacity meet the circuit's peak operational requirements.
The UMB9NTN belongs to the UMB series of PNP digital transistors from ROHM. This series is designed for general-purpose switching and amplification tasks where board space is limited. It serves as a direct replacement for single PNP transistors plus discrete resistors, reducing component count and assembly time.
Publicly confirmed substitutes include the UMB4NTN and UMB10NTN. These parts share similar form factors and electrical characteristics but may differ in specific resistor ratios or thermal ratings. Verify pin compatibility before substitution.