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The UMC3N is a pre-biased bipolar junction transistor (BJT) array manufactured by Shenzhen Slkormicro Semicon Co., Ltd. It integrates one NPN and one PNP transistor within a single surface-mount package. The device features a collector-emitter voltage rating of 50V and a continuous collector current capacity of 50mA. Its transition frequency is specified at 250MHz, supporting high-speed switching applications. The component operates with a maximum power dissipation of 150mW. It is housed in an SOT-353 package, designed for compact electronic circuits requiring dual polarity biasing solutions.
Verify the specific manufacturer part number against official datasheets to ensure authenticity. Confirm RoHS3 compliance and moisture sensitivity level requirements for your manufacturing process. Check for any specific ordering suffixes that may indicate tape-and-reel versus cut-tape configurations. Ensure the supplier provides traceable documentation matching the UMC3N designation.
Select this component when a compact solution for both NPN and PNP switching is required. The pre-biased configuration reduces external resistor count compared to discrete alternatives. Evaluate the 50V voltage rating and 50mA current limits against circuit load requirements. Consider the SOT-353 footprint constraints during PCB layout design.
This component belongs to the pre-biased BJT array category from Shenzhen Slkormicro Semicon Co., Ltd. The company focuses on semiconductor devices including discrete components and power management ICs. The UMC3N serves as a specialized integrated transistor solution within their broader portfolio of general-purpose and power devices.
Public confirmed substitute part numbers are not available in the provided source material. Consult official distributor databases for cross-reference data.