UMC3NT1G

Overview

The UMC3NT1G is a dual Bias Resistor Transistor (BRT) containing complementary PNP and NPN silicon transistors with monolithic bias resistor networks in an SC-88A/SOT-353 package. It features a collector-emitter voltage of 50 Vdc, a collector current of 100 mAdc, and total power dissipation of 150 mW at 25°C ambient temperature. The thermal resistance from junction to ambient is 833 °C/W. Operating and storage temperatures range from -65°C to +150°C.

Feature Summary

• Integrates a single transistor with a monolithic bias network consisting of two resistors to replace individual devices and external resistor bias networks.
• Houses two complementary BRT devices in a compact SOT-353 package designed for low-power surface mount applications where board space is limited.

Applications

• Low power surface mount applications requiring minimized board space
• Automotive and other applications requiring unique site and control change requirements

Procurement Notes

Verify the specific ordering suffix when sourcing components. The NSV prefix indicates qualification for automotive applications and PPAP capability. Confirm that the device meets RoHS compliance standards and is lead-free before finalizing procurement specifications.

Selection Notes

Select the UMC3NT1G when a complementary pair of digital transistors with integrated biasing is required in a five-pin surface-mount package. Ensure the design accommodates the 150 mW power dissipation limit and the 833 °C/W thermal resistance characteristics under expected operating conditions.

Part Context

This component belongs to the UMC2NT1 series of dual common base-collector bias resistor transistors manufactured by onsemi. The series includes variants such as UMC2NT1G, UMC5NT1G, and their NSV prefixed counterparts, all sharing similar packaging and fundamental electrical architectures.

Replacement Considerations

Direct substitutes within the same family include the UMC2NT1G and UMC5NT1G. Verify pin compatibility and internal resistor values, as these parameters differ across the series variants despite sharing the same physical package.

FAQ

What are the typical input resistor values for the UMC3NT1G?

For the UMC3NT1G, the typical input resistor R1 is 7.0 kΩ for the PNP transistor and 10 kΩ for the NPN transistor.

Is the UMC3NT1G qualified for automotive applications?

The standard UMC3NT1G is not explicitly designated for automotive use. However, the NSVUMC3NT1G variant is AEC-Q101 qualified and PPAP capable for automotive applications.

What is the maximum collector-emitter breakdown voltage for this device?

The maximum collector-emitter breakdown voltage (V(BR)CEO) for both the PNP and NPN transistors in the UMC3NT1G is 50 Vdc.