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The UMC3NTR is a dual digital transistor from ROHM Semiconductor, integrating one NPN and one PNP epitaxial planar silicon transistor within a single UMT6 (SOT-363) surface-mount package. This configuration includes built-in bias resistors for both transistors, typically rated at 10 kOhms each. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA per channel. It features a transition frequency of 250MHz and a power dissipation capacity of 150mW, designed for efficient space-saving in compact electronic circuits.
Verify the specific suffix 'TR' indicates tape-and-reel packaging when sourcing. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure the selected distributor provides genuine ROHM Semiconductor products to avoid counterfeit components. Check for any regional export control classifications or material declaration requirements relevant to your manufacturing location.
Select this component when a complementary NPN/PNP pair is required in a minimal footprint. The 10kOhm internal resistor value suits standard logic interface applications. Consider the 50V rating for low-voltage DC switching tasks. Evaluate the 150mW thermal dissipation limit against the expected operating temperature range and ambient conditions of the final assembly.
This part belongs to the UMC series of dual digital transistors manufactured by ROHM Semiconductor. It serves as a pre-biased transistor array alternative to using two separate discrete transistors. The UMT6 package code corresponds to the SOT-363 physical form factor, widely used in portable devices where space constraints are critical.
Publicly confirmed substitute part numbers for UMC3NTR were not identified in the provided source data. Designers should consult official ROHM documentation for direct equivalents or verify compatibility with other manufacturers' complementary dual digital transistor arrays.