UMC4NQ-7

Overview

The UMC4NQ-7 is a dual complementary pre-biased transistor array from Diodes Incorporated, integrating one NPN and one PNP bipolar junction transistor within a single SOT-353 package. The device features an integrated base resistor (R1) of 47 kΩ for the NPN section and 10 kΩ for the PNP section, alongside emitter resistors (R2). It operates with a maximum collector-emitter voltage of 50 V and supports a continuous collector current of 100 mA per channel. Key electrical parameters include a DC current gain (hFE) minimum of 68 and a transition frequency (fT) of 250 MHz. The component is qualified to AEC-Q101 standards and offers a power dissipation rating of 290 mW.

Feature Summary

• Integrates complementary NPN and PNP transistors with built-in biasing resistors to reduce external component count and board space.
• Automotive-grade reliability achieved through AEC-Q101 qualification and PPAP capability.
• Utilizes an ultra-small SOT-353 surface-mount package designed for automated assembly processes.

Applications

• General-purpose switching applications in automotive electronics
• Driver circuits for low-power loads requiring complementary logic control
• Interface circuits between microcontrollers and peripheral devices

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the standard 3,000-unit reel packaging configuration. Confirm that the 'NP1' marking code matches the required identification for production traceability. Ensure compliance with RoHS and halogen-free requirements as specified in the manufacturer's documentation before finalizing procurement specifications.

Selection Notes

Select this component when a compact solution for simultaneous NPN and PNP switching is required. The fixed internal resistance values of 47 kΩ and 10 kΩ suit standard logic interface voltages. Verify that the 250 MHz transition frequency meets the signal speed requirements of the target application circuit.

Part Context

This part belongs to the UMC series of dual complementary pre-biased transistors manufactured by Diodes Incorporated. The series provides integrated solutions for driving complementary pairs in minimal footprint packages. The UMC4NQ variant specifically combines distinct resistance ratios for its NPN and PNP channels within the SOT-353 housing.

Replacement Considerations

Direct substitutes must match the SOT-353-5 package and contain one NPN and one PNP pre-biased transistor. Verify that replacement parts maintain equivalent R1 values of 47 kΩ and 10 kΩ respectively, along with matching 50 V voltage ratings and 100 mA current capabilities.

FAQ

What are the specific values of the internal base resistors?

The NPN transistor (Q1) has an internal base resistor (R1) of 47 kΩ, while the PNP transistor (Q2) has an internal base resistor (R1) of 10 kΩ.

Is this component suitable for automotive applications?

Yes, the UMC4NQ-7 is qualified to AEC-Q101 standards and is PPAP capable, making it suitable for automotive electronic designs.

What is the maximum power dissipation rating?

The maximum power dissipation (PD) is rated at 290 mW at an ambient temperature of +25°C.