UMC5NT1

Overview

The UMC5NT1 is a dual Bias Resistor Transistor (BRT) from onsemi, housed in an SC-88A/SOT-353 package. It integrates one PNP and one NPN transistor with monolithic bias resistor networks. Key electrical parameters include a Collector-Base Voltage (VCBO) of 50 Vdc and Collector-Emitter Voltage (VCEO) of 50 Vdc for both devices. The maximum collector current (IC) is 100 mAdc. Thermal characteristics specify a junction-to-ambient thermal resistance (RθJA) of 833 °C/W and total package dissipation of 150 mW at 25°C ambient temperature. Operating and storage temperatures range from -65 to +150 °C.

Feature Summary

• Integrates complementary PNP and NPN transistors with monolithic bias resistor networks into a single device
• Designed to replace individual discrete transistors and external resistor bias networks
• Optimized for low power surface mount applications where board space is limited

Applications

• Low power surface mount circuit designs requiring space efficiency
• Digital logic interface circuits utilizing integrated biasing
• Applications necessitating simplified circuit design through component count reduction

Procurement Notes

Verify the specific ordering suffix when purchasing. The 'G' suffix indicates a Pb-Free package variant (UMC5NT1G). Confirm that the required package type matches the SC-88A/SOT-353 footprint. Ensure the selected part number aligns with the desired environmental compliance standards before finalizing procurement orders.

Selection Notes

Select the UMC5NT1 when a compact solution combining both PNP and NPN switching capabilities is required. The choice between standard and Pb-Free variants depends on manufacturing process requirements. Verify that the 50 Vdc voltage ratings and 100 mAdc current limits meet the specific application constraints. Consider the SOT-353 package dimensions for PCB layout compatibility.

Part Context

This component belongs to the UMC2NT1/UMC3NT1/UMC5NT1 series of Dual Common Base-Collector Bias Resistor Transistors. These devices are categorized as digital transistors designed to simplify circuit architecture by integrating passive biasing elements directly with active semiconductor switches within a single surface-mount package.

Replacement Considerations

Public confirmed substitute part numbers: None identified.