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The UMD11N-TP is a digital transistor array manufactured by Micro Commercial Components (MCC). It integrates one NPN and one PNP bipolar junction transistor within a single SOT-363 surface-mount package. The device features built-in base resistors to simplify circuit design and reduce component count. Key electrical specifications include a maximum collector current of 100 mA, a collector-emitter breakdown voltage of 50 V, and a transition frequency of 250 MHz. The unit operates with a maximum power dissipation of 150 mW and supports a maximum operating temperature of +150°C.
Verify the specific datasheet revision and pinout configuration before integration, as manufacturing updates may occur. Confirm RoHS compliance status through official MCC documentation or authorized distributor declarations. Ensure the SOT-363 footprint matches the target PCB layout. Check for any recent Product Change Notifications (PCNs) regarding material or process changes that could affect qualification.
Select this component when space constraints require dual-transistor functionality in a minimal footprint. The integrated resistor values should match the required drive current and logic voltage levels of the application. Consider the 150 mW power dissipation limit under worst-case thermal conditions. Verify that the 50 V breakdown voltage exceeds the maximum transient voltages present in the circuit.
The UMD11N-TP belongs to MCC's UMD series of complex digital transistors. This series provides pre-biased transistor arrays designed to replace discrete resistor-transistor combinations. The part is commonly used in portable devices and industrial control systems where board real estate is limited. It serves as a direct replacement for similar NPN/PNP dual digital transistors from other manufacturers offering identical pinouts and electrical characteristics.
Compatible substitutes include the DTC143EU from Diodes Inc. and the DTB143P from onsemi. These parts share the same SOT-363 package and complementary NPN/PNP configuration. Verify equivalent base resistance values and hFE ranges before substitution.