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The UMD12NFHATR is a dual digital transistor from ROHM Semiconductor, featuring one NPN and one PNP bipolar junction transistor (BJT) in a single SOT-363 (UMT6) package. It integrates bias resistors with typical values of 47 kΩ for both input (R1) and emitter-base (R2). Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, continuous collector current of 100 mA, and power dissipation of 150 mW. The device supports an operating temperature range of -55°C to +150°C and meets AEC-Q101 automotive standards.
Verify the complete ordering part number includes the suffix 'ATR' to confirm tape-and-reel packaging containing 3000 units per reel. Confirm RoHS compliance status and ensure the specific variant matches the required resistor ratios for the target application design.
Select this component when a mixed NPN/PNP dual transistor solution is required for space-constrained designs. The 47 kΩ integrated resistors suit general-purpose switching applications. Ensure the 150 mW power dissipation limit accommodates the thermal environment of the final assembly.
This part belongs to the UMD12 series of complex transistors designed for automotive electronics. It serves as a compact alternative to discrete transistor pairs, offering reduced board space and simplified layout. The series is optimized for use with ROHM's automotive SoCs and power management ICs.
Direct pin-compatible substitutes within the same family include UMD12NTR. For equivalent single-transistor functions, consider DTA144E or DTC144E, though these require separate components for dual-channel applications.