SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The UMD22NHE3-TP is a dual digital transistor from Micro Commercial Components, integrating one NPN and one PNP transistor within a single SOT-363-6 surface-mount package. It features built-in bias resistors with typical values of 4.7 kOhms each, maintaining a resistor ratio of 10. The device supports a collector-emitter voltage of 50V for the NPN side and -5V for the PNP side, with a continuous collector current of 100 mA. Key electrical parameters include a minimum DC current gain (hfe) of 80 at 10 mA and 5 V, a power dissipation of 200 mW, and a saturation voltage of 300 mV. It operates up to +150°C and holds AEC-Q101 qualification.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm AEC-Q101 automotive qualification status if required for your application. Ensure the SOT-363-6 package matches your PCB footprint requirements. Review RoHS compliance documentation for environmental standards adherence before final procurement decisions.
Select this component when space constraints necessitate a dual-transistor solution in a SOT-363-6 package. The integrated 4.7 kOhm bias resistors reduce external component count compared to discrete setups. Consider the 200 mW power dissipation limit and 100 mA current rating for thermal management. Verify that the 50V NPN and -5V PNP voltage ratings align with your system's supply rails.
This part belongs to the UMD22N series of complex transistors manufactured by Micro Commercial Components. It serves as an alternative to discrete NPN and PNP pairs, offering a consolidated solution for digital switching applications. The HE3 suffix indicates specific manufacturing enhancements compliant with environmental directives.
Publicly confirmed substitute part numbers are not available in the provided source material.