UMD2NFHATR

Overview

The UMD2NFHATR is a dual digital transistor manufactured by ROHM Semiconductor, featuring an integrated NPN and PNP bipolar junction transistor (BJT) pair within a single SOT-363 (UMT6) surface-mount package. This component incorporates built-in bias resistors to simplify circuit design. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V for both transistors, a continuous collector current (IC) of 100 mA, and a total power dissipation (Pd) of 150 mW. The device exhibits a DC current gain (hFE) ranging from a minimum of 100 to a maximum of 600 at 1 mA and 5 V, with a transition frequency (fT) of 250 MHz. It operates within a temperature range of -55°C to +150°C.

Feature Summary

• Integrates complementary NPN and PNP transistors with built-in base bias resistors in a compact six-terminal surface-mount package.
• Provides high DC current gain and fast switching characteristics suitable for logic interface and driver applications.
• Complies with AEC-Q101 automotive grade standards for reliability and thermal stability.

Applications

• Logic level shifting and interface circuits between microcontrollers and peripheral devices.
• Driver stages for small-signal switching applications in consumer electronics.
• Biasing networks for amplifier circuits requiring compact dual-transistor solutions.

Procurement Notes

Verify the specific suffix 'ATR' corresponds to the required tape-and-reel packaging configuration when sourcing. Confirm that the AEC-Q101 qualification status meets the environmental requirements for the target application. Ensure the SOT-363 footprint matches the PCB layout constraints. Cross-reference the manufacturer's latest datasheet for any updates on lead times or end-of-life notices before finalizing procurement plans.

Selection Notes

Select this component when a dual BJT configuration with integrated biasing is required in a minimal footprint. The 50 V rating and 100 mA current capacity suit low-power switching tasks. Consider the 150 mW power dissipation limit for thermal management. Compare input resistance values if specific bias currents are critical. Verify compatibility with automated assembly processes due to the small SOT-363 package size.

Part Context

The UMD2NFHATR belongs to ROHM's UMD series of complex digital transistors. These components consolidate discrete transistor and resistor networks into single packages to reduce board space and assembly costs. The UMD2 variant specifically pairs one NPN and one PNP transistor, offering a complementary solution for push-pull or differential signaling applications where space is constrained.

Replacement Considerations

Potential substitutes include other dual digital transistors in SOT-363 packages with matching NPN/PNP polarity and similar voltage/current ratings. Verify equivalent pinout configurations to ensure direct replacement without PCB redesign. Check for comparable hFE ranges and built-in resistor values to maintain circuit performance integrity.