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The UMD2NTR is a dual digital transistor manufactured by ROHM Semiconductor, featuring one NPN and one PNP pre-biased transistor array in a surface-mount SOT-363 (UMT6) package. It operates with a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The device includes typical base resistors of 22 kΩ and emitter-base resistors of 22 kΩ. Key electrical parameters include a DC current gain (hFE) minimum of 56 at 5mA/5V, a transition frequency of 250MHz, and a power dissipation rating of 150mW.
Verify the specific ordering suffix against official ROHM documentation to confirm packaging format and tape specifications. Ensure compliance with RoHS3 standards and check moisture sensitivity levels before assembly. Confirm availability through authorized distributors as lead times may vary based on production schedules.
Select this component when a matched NPN/PNP pair with integrated biasing is required in a minimal footprint. Consider the 22kΩ resistor values and 50V voltage rating relative to the target circuit's operating conditions. Evaluate thermal performance given the 150mW power dissipation limit in the small outline package.
This part belongs to the UMD series of complex transistors from ROHM Semiconductor. These devices are designed to replace multiple discrete components, reducing assembly complexity. The UMT6 package variant offers a standardized footprint compatible with various automated pick-and-place manufacturing processes.
Equivalent single-transistor parts include DTA124E for the NPN section and DTC124E for the PNP section. Verify pinout compatibility and electrical characteristics when substituting with other manufacturers' dual digital transistors.