UMD3NFHATR

Overview

The UMD3NFHATR is a dual digital transistor from ROHM Semiconductor, integrating an NPN and a PNP bipolar junction transistor within a single SOT-363 (UMT6) surface-mount package. This component features built-in bias resistors to simplify circuit design. Key electrical specifications include a maximum collector-emitter voltage of 50V for both transistors, a continuous collector current of 100mA, and a power dissipation rating of 150mW. The device exhibits a transition frequency of 250MHz and a typical DC current gain minimum of 30 at 5mA. It is qualified under the AEC-Q101 automotive standard and supports operating temperatures up to +150°C.

Feature Summary

• Integrates complementary NPN and PNP transistors with pre-bias resistors in a compact six-terminal package.
• AEC-Q101 qualified for automotive reliability standards.
• High thermal stability supporting operation up to +150°C.

Applications

• Automotive electronic control units requiring space-saving dual switching solutions.
• General-purpose logic level shifting and interface circuits.
• High-frequency signal processing applications utilizing the 250MHz transition frequency.

Procurement Notes

Verify the specific suffix 'ATR' corresponds to the required tape-and-reel packaging configuration for automated assembly lines. Confirm that the AEC-Q101 qualification meets the specific temperature grade requirements of the target application. Ensure the SOT-363 footprint matches the PCB layout constraints before finalizing procurement orders.

Selection Notes

Select this component when a complementary NPN/PNP pair with integrated biasing is required in a minimal footprint. The 50V voltage rating and 100mA current capacity suit low-power switching tasks. Consider the 150mW power dissipation limit for thermal management in dense layouts. Verify that the 10kΩ internal resistor values align with the driving source impedance requirements.

Part Context

This part belongs to the UMD3 series of complex transistors manufactured by ROHM Semiconductor. It serves as a direct replacement for discrete dual-transistor configurations, reducing component count and board space. The UMT6 package designation indicates a small outline form factor compatible with standard SMT processes.

Replacement Considerations

The UMD3N is listed as a similar level alternative with the same pinout and package. Designers should verify if the non-AEC version meets environmental requirements. Other UMD series variants may offer different resistance ratios or transistor polarities.