UMD3NTR

Overview

The UMD3NTR is a dual digital transistor from ROHM Semiconductor, integrating one NPN and one PNP pre-biased transistor within a compact SOT-363 (UMT6) surface-mount package. It features a supply voltage of 50V and a continuous collector current of 100mA for both polarities. The device includes built-in bias resistors with typical values of 10 kOhms for both base and emitter connections. Key electrical specifications include a maximum operating frequency of 250MHz, a power dissipation rating of 150mW, and a minimum DC current gain (hFE) of 30 at specified test conditions.

Feature Summary

• Integrates complementary NPN and PNP transistors with built-in bias resistors in a single compact package to reduce component count and board space.
• Provides high-speed switching capabilities suitable for applications requiring fast response times due to its 250MHz transition frequency.
• Offers low saturation voltage characteristics to minimize power loss during conduction states.

Applications

• Differential amplifier circuits
• High-frequency crystal oscillator starters
• General-purpose switching logic interfaces

Procurement Notes

Verify the specific ordering suffix to ensure the correct packaging format, such as tape and reel or cut tape, matches production requirements. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer prior to procurement. Ensure storage conditions adhere to moisture sensitivity levels defined in the datasheet to maintain component integrity before soldering.

Selection Notes

Select the UMD3NTR when a compact solution requires both NPN and PNP switching functions with integrated biasing. Compare input resistance values against drive source capabilities to ensure adequate base current. Evaluate thermal constraints based on the 150mW power dissipation limit and ambient temperature range. Verify that the 50V breakdown voltage exceeds the maximum circuit operating voltage with sufficient margin.

Part Context

The UMD3NTR belongs to the UMD3 series of complex transistors manufactured by ROHM Semiconductor. These devices are designed to replace multiple discrete components, simplifying circuit design and improving reliability. The UMT6 package provides a small footprint ideal for portable electronics and dense PCB layouts where space is limited.

Replacement Considerations

Publicly documented equivalent single-transistor parts include DTA114E for the NPN section and DT C114E for the PNP section. Direct replacement requires evaluating if separate components fit the spatial constraints. Verify pin compatibility and electrical parameters against the original design requirements before substitution.