SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The UMD4NTR is a dual digital transistor from ROHM Semiconductor, integrating one NPN and one PNP pre-biased transistor within a compact SOT-363 (UMT6) surface-mount package. It features typical base resistors of 10 kΩ and 47 kΩ with an emitter-base resistor of 47 kΩ. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA for both polarities. Key electrical characteristics include a minimum DC current gain (hFE) of 68 at 5mA/5V, a transition frequency of 250MHz, and a power dissipation rating of 150mW. The unit operates up to +150°C and complies with RoHS standards.
Verify the specific ordering suffix to confirm packaging format, as variants exist for tape-and-reel, cut tape, and MouseReel configurations. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure the selected variant matches the required supply chain volume and handling specifications for the intended production environment.
Select this component when a compact solution for simultaneous NPN and PNP switching is required. The integrated bias resistors eliminate external components, simplifying layout. Verify that the 50V voltage rating and 100mA current capacity meet the load requirements. Consider the 150mW power dissipation limit for thermal management in dense PCB layouts.
The UMD4NTR belongs to the UMD4N series of complex transistors manufactured by ROHM Semiconductor. These devices are designed to replace multiple discrete components, offering a space-saving alternative for applications requiring paired NPN/PNP functionality. The series is widely used in portable electronics and consumer appliances where board real estate is limited.
Publicly documented equivalent single-part replacements include DTA124E for the NPN section and DT C124E for the PNP section. Designers must evaluate if discrete components can replicate the combined performance and footprint of the integrated UMD4NTR unit.