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The UMD5NTR is a pre-biased complex transistor array manufactured by Rohm Semiconductor, housed in a surface-mount UMT6 (SOT-363) package. It integrates one NPN and one PNP transistor with built-in biasing resistors to simplify circuit design. The device supports a maximum collector-emitter voltage of 50V for both polarities and a continuous collector current of 100mA. Key electrical parameters include a DC current gain (hFE) of 68 at 5mA/5V for the NPN side and 30 at 10mA/5V for the PNP side. The NPN unit features base resistance R1 of 47kΩ and emitter-base resistance R2 of 47kΩ, while the PNP unit has R1 of 4.7kΩ and R2 of 10kΩ. Maximum power dissipation is rated at 150mW for the NPN and 120mW for the PNP, with a transition frequency of 250MHz.
Verify the specific suffix and tape-and-reel quantity against the manufacturer's latest datasheet before ordering. Confirm that the UMT6 package marking aligns with project requirements. Ensure compliance with RoHS3 standards if required by the end product specifications. Check for any recent product change notices regarding material or manufacturing site updates.
Select this component when a complementary pair of pre-biased transistors is needed in a minimal footprint. Compare the internal resistor values against the target logic levels to ensure proper drive capability. Verify that the 50V voltage rating and 100mA current capacity exceed the maximum operational stresses of the application circuit.
This part belongs to Rohm's UMD series of complex transistors, which combine dual bipolar junction transistors with integrated bias networks. The UMT6 package is a standard small-outline form factor widely used in consumer electronics. It serves as a direct replacement for discrete resistor-transistor combinations in space-constrained designs.
Equivalent parts may include other dual pre-biased transistors from manufacturers like ON Semiconductor or Diodes Inc., provided they match the UMT6/SOT-363 package and have compatible NPN/PNP configurations and resistor values.